Semiconductor device having analog transistor with improved...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S351000, C257S206000, C257S350000, C257SE21611

Reexamination Certificate

active

07952147

ABSTRACT:
A semiconductor device with improved transistor operating and flicker noise characteristics includes a substrate, an analog NMOS transistor and a compressively-strained-channel analog PMOS transistor disposed on the substrate. The device also includes a first etch stop liner (ESL) and a second ESL which respectively cover the NMOS transistor and the PMOS transistor. The relative measurement of flicker noise power of the NMOS and PMOS transistors to flicker noise power of reference unstrained-channel analog NMOS and PMOS transistors at a frequency of 500 Hz is less than 1.

REFERENCES:
patent: 6906393 (2005-06-01), Sayama et al.
patent: 2005/0196926 (2005-09-01), Hanafi et al.
patent: 2005/0245034 (2005-11-01), Fukuda et al.
patent: 2005/0260806 (2005-11-01), Chang et al.
patent: 2005/0285187 (2005-12-01), Bryant et al.
patent: 2006/0011984 (2006-01-01), Currie
patent: 2006/0105106 (2006-05-01), Balseanu et al.
patent: 2007/0238250 (2007-10-01), Zhang et al.
patent: 2007/0249113 (2007-10-01), Grudowski et al.
patent: 1429055 (2003-07-01), None
patent: 1505839 (2004-06-01), None
patent: 2006-013082 (2006-01-01), None
patent: 2006-024784 (2006-01-01), None
patent: 1020050096386 (2005-10-01), None
Dharmadhikari, V., et al.; “UV-assisted processing for advanced dielectric films”, Solid State Technology, Mar. 2005.
Taiwan Intellectual Property Office, Office Action dated Oct. 29, 2010.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device having analog transistor with improved... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having analog transistor with improved..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having analog transistor with improved... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2654492

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.