Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-05-31
2011-05-31
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S351000, C257S206000, C257S350000, C257SE21611
Reexamination Certificate
active
07952147
ABSTRACT:
A semiconductor device with improved transistor operating and flicker noise characteristics includes a substrate, an analog NMOS transistor and a compressively-strained-channel analog PMOS transistor disposed on the substrate. The device also includes a first etch stop liner (ESL) and a second ESL which respectively cover the NMOS transistor and the PMOS transistor. The relative measurement of flicker noise power of the NMOS and PMOS transistors to flicker noise power of reference unstrained-channel analog NMOS and PMOS transistors at a frequency of 500 Hz is less than 1.
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Lee Ho
Rhee Hwa-sung
Ueno Tetsuji
Jackson, Jr. Jerome
Page Dale
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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