Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-06-28
2011-06-28
Ho, Tu-Tu V (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S217000, C438S276000, C438S287000, C257S335000, C257S328000, C257S346000, C257S411000, C257SE29256, C257SE21417
Reexamination Certificate
active
07968412
ABSTRACT:
According to an embodiment of a method for manufacturing a MISFET device, in a semiconductor wafer, a semiconductor layer is formed, having a first type of conductivity and a first level of doping. A first body region and a second body region, having a second type of conductivity, opposite to the first type of conductivity, and an enriched region, extending between the first and second body regions are formed in the semiconductor layer. The enriched region has the first type of conductivity and a second level of doping, higher than the first level of doping. Moreover, a gate electrode is formed over the enriched region and over part of the first and second body regions, and a dielectric gate structure is formed between the gate electrode and the semiconductor layer, the dielectric gate structure having a larger thickness on the enriched region and a smaller thickness on the first and second body regions. To form the enriched region, a first conductive layer is made on the semiconductor layer, an enrichment opening is formed in the first conductive layer, and a dopant species is introduced into the semiconductor layer through the enrichment opening. Furthermore, the formation of the dielectric gate structure envisages filling the enrichment opening with dielectric material, prior to forming the first body region and the second body region.
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Arena Giuseppe
Battiato Orazio
Di Paola Fabrizio Marco
Magri′ Angelo
Repici Domenico
Graybeal Jackson LLP
Ho Tu-Tu V
Jablonski Kevin D.
Jorgenson Lisa K.
STMicroelectronics S.r.l.
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