Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2011-03-01

2011-03-01

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21428

Reexamination Certificate

active

07897466

ABSTRACT:
There is provided a method for manufacturing a semiconductor device having a high breakdown voltage transistor and a low breakdown voltage transistor provided on a same semiconductor substrate. The method includes forming a first gate electrode of the high breakdown voltage transistor and a second gate electrode of the low breakdown voltage transistor on a transistor formation area of the substrate, as well as a dummy gate electrode on a dummy pattern formation area of the substrate; forming an interlayer insulation film on the substrate so as to cover the first and the second gate electrodes and the dummy gate electrode; and forming a first contact hole on the first gate electrode, a second contact hole on the second gate electrode, and a dummy contact hole on the dummy gate electrode, respectively, by partially dry etching the interlayer insulation film, wherein in the formation of the contact holes, a top surface of the dummy gate electrode is exposed at a bottom of the dummy contact hole before a top surface of the first gate electrode is exposed at a bottom of the first contact hole.

REFERENCES:
patent: 7118963 (2006-10-01), Mori
patent: 7504308 (2009-03-01), Kim
patent: 2004/0088658 (2004-05-01), Minda
patent: 06-310713 (1994-11-01), None
patent: 2003-031677 (2003-01-01), None
patent: 2004-152929 (2004-05-01), None
patent: 2004-266067 (2004-09-01), None
patent: 2004-342922 (2004-12-01), None

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