Methods of forming electronic devices containing Zr-Sn-Ti-O...

Details Methods of forming electronic devices containing Zr-Sn-Ti-O... Methods of forming electronic devices containing Zr-Sn-Ti-O...

2011-04-12

2011-04-12

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257SE21274, C427S124000

Reexamination Certificate

active

07923381

ABSTRACT:
A dielectric film containing Zr—Sn—Ti—O and methods of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Films of Zr—Sn—Ti—O may be formed in a self-limiting growth process.

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