Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Reexamination Certificate
2011-06-28
2011-06-28
Hamilton, Cynthia (Department: 1722)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
C430S276100, C430S316000, C430S323000, C430S313000, C438S952000
Reexamination Certificate
active
07968270
ABSTRACT:
A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements selected from the group consisting of O, N, S and F; and a photoresist material disposed on the RCHX material. The invention is also directed to methods of making the lithographic structure, and using the structure to pattern a substrate.
REFERENCES:
patent: 4557797 (1985-12-01), Fuller et al.
patent: 5370969 (1994-12-01), Vidusek
patent: 6218078 (2001-04-01), Iacoponi
patent: 6268457 (2001-07-01), Kennedy et al.
patent: 6410209 (2002-06-01), Adams et al.
patent: 6420088 (2002-07-01), Angelopoulos et al.
patent: 6500773 (2002-12-01), Gaillard et al.
patent: 6503689 (2003-01-01), Zampini et al.
patent: 6503692 (2003-01-01), Angelopoulos et al.
patent: 6514667 (2003-02-01), Angelopoulos et al.
patent: 6638851 (2003-10-01), Cowley et al.
patent: 6653048 (2003-11-01), Brock et al.
patent: 6660645 (2003-12-01), Bell et al.
patent: 6686124 (2004-02-01), Angelopoulos et al.
patent: 6699784 (2004-03-01), Xia et al.
patent: 6730454 (2004-05-01), Pfeiffer et al.
patent: 7326646 (2008-02-01), Ruelke et al.
patent: 2002/0052125 (2002-05-01), Shaffer et al.
patent: 2002/0195419 (2002-12-01), Pavelchek
patent: 2004/0053504 (2004-03-01), Wise et al.
patent: 2004/0266201 (2004-12-01), Wille et al.
patent: 2005/0077597 (2005-04-01), Toma et al.
patent: 2005/0104150 (2005-05-01), Wetzel et al.
patent: 2005/0164502 (2005-07-01), Deng et al.
patent: 2005/0274692 (2005-12-01), Iwabuchi et al.
patent: 2005/0277058 (2005-12-01), Iwabuchi et al.
patent: 2005/0277755 (2005-12-01), Iwabuchi et al.
patent: 2005/0277756 (2005-12-01), Hamada et al.
patent: 2006/0019195 (2006-01-01), Hatakeyama et al.
patent: 2006/0134547 (2006-06-01), Huang et al.
patent: 2006/0177772 (2006-08-01), Abdallah et al.
patent: 2006/0234158 (2006-10-01), Hatakeyama
patent: 2008/0085458 (2008-04-01), Yamato et al.
patent: WO-2006008250 (2006-01-01), None
SiLK: Porous SiLK Semiconductor Dielectric Resins: ILD Selection for Integration Success, Technical Paper from http://www.dow.com/PublishedLiterature/dh—0038/0901b80380038538.pdf?filepath=silk/pdfs
oreg/618-00322.pdf&fromPage=GetDoc, published Feb. 2004, by The Dow Chemical Company, printed in USA, 11 pages.
Angelopoulos Marie
Babich Katherina E.
Burns Sean D.
Conti Richard A.
Gabor Allen H.
Connolly Bove & Lodge & Hutz LLP
Hamilton Cynthia
International Business Machines - Corporation
Morris Daniel P.
LandOfFree
Process of making a semiconductor device using multiple... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process of making a semiconductor device using multiple..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process of making a semiconductor device using multiple... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2640727