Structure and method to integrate dual silicide with dual...

Details Structure and method to integrate dual silicide with dual... Structure and method to integrate dual silicide with dual...

2011-06-14

2011-06-14

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S275000, C438S592000, C257SE21637, C257SE27062

Reexamination Certificate

active

07960223

ABSTRACT:
The present invention provides a semiconducting device including a substrate including a semiconducting surface having an n-type device in a first device region and a p-type device in a second device region, the n-type device including a first gate structure present overlying a portion of the semiconducting surface in the first device region including a first work function metal semiconductor alloy in the semiconducting surface adjacent to the portion of the semiconducting surface underlying the gate structure, and a first type strain inducing layer present overlying the first device region; and a p-type device including a second gate structure present overlying a portion of the semiconducting surface in the second device region including a second work function metal semiconductor alloy in the semiconducting surface adjacent to the portion of the semiconducting surface underlying the gate structure, and a second type strain inducing layer present overlying the second device region.

REFERENCES:
patent: 5994176 (1999-11-01), Wu
patent: 7112483 (2006-09-01), Lin et al.
patent: 7459756 (2008-12-01), Lin et al.
patent: 7482215 (2009-01-01), Dyer et al.
patent: 7585720 (2009-09-01), Sudo
patent: 2007/0077741 (2007-04-01), Frohberg et al.
patent: 2008/0102572 (2008-05-01), Komatsubara
patent: 2008/0121964 (2008-05-01), Matsubara et al.
patent: 2008/0150033 (2008-06-01), Greene et al.
patent: 2008/0157216 (2008-07-01), Kim et al.
patent: 2008/0164531 (2008-07-01), Jawarani et al.
patent: 2008/0169510 (2008-07-01), Kumar et al.
patent: 2008/0185659 (2008-08-01), Ke et al.
patent: 2008/0191285 (2008-08-01), Ko et al.
patent: 2009/0014808 (2009-01-01), Lee et al.
patent: 2009/0065872 (2009-03-01), Zhu
patent: 2009/0108348 (2009-04-01), Yang et al.
patent: 2009/0291540 (2009-11-01), Zhang et al.
patent: 2010/0065919 (2010-03-01), Nam et al.

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