Method of forming semiconductor device

Details Method of forming semiconductor device Method of forming semiconductor device

2011-05-24

2011-05-24

Pham, Hoai V (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S221000, C438S427000, C257SE21545

Reexamination Certificate

active

07947550

ABSTRACT:
A semiconductor device may include, but is not limited to, first and second well regions, and a well isolation region isolating the first and second well regions. The first and second well regions each may include an active region, a device isolation groove that defines the active region, and a device isolation insulating film that fills the device isolation groove. The first and second well regions may include first and second well layers, respectively. The well isolation region may include a well isolation groove, a well isolation insulating film that fills the well isolation groove, and a diffusion stopper layer disposed under a bottom of the well isolation groove. The first and second well layers have first and second bottoms respectively, which are deeper in depth than a bottom of the device isolation groove and shallower in depth than the bottom of the well isolation groove.

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patent: 2001-144276 (2001-05-01), None
patent: 2006-237208 (2006-09-01), None
patent: 2007-227920 (2007-09-01), None

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