Nitride read only memory device with buried diffusion...

Details Nitride read only memory device with buried diffusion... Nitride read only memory device with buried diffusion...

2011-06-07

2011-06-07

Brewster, William M (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S487000, C438S408000, C438S224000, C257SE21423, C257S051000, C257S075000, C257S369000

Reexamination Certificate

active

07955934

ABSTRACT:
A method for making a nitride read only memory device with buried diffusion spacers is disclosed. An oxide-nitride-oxide (ONO) layer is formed on top of a silicon substrate, and a polysilicon gate is formed over the ONO layer. The polysilicon gate is formed less than a length of the ONO layer. Two buried diffusion spacers are formed beside two sidewalls of the polysilicon gate and over the ONO layer. Two buried diffusion regions are implanted on the silicon substrate next to the two buried diffusion spacers. The two buried diffusion regions are then annealed such that the approximate interfaces of the buried diffusion regions are under the sidewalls of the polysilicon gate. The structure of a nitride read only memory device with buried diffusion spacers is also described.

REFERENCES:
patent: 5966603 (1999-10-01), Eitan
patent: 6461916 (2002-10-01), Adachi et al.
patent: 6746906 (2004-06-01), Rabkin et al.
patent: 7208371 (2007-04-01), Jung
patent: 2009/0146146 (2009-06-01), Knoefler et al.

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