Semiconductor device and method of manufacturing same

Details Semiconductor device and method of manufacturing same Semiconductor device and method of manufacturing same

2011-07-12

2011-07-12

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S597000, C438S666000, C438S675000

Reexamination Certificate

active

07977183

ABSTRACT:
To provide a technique capable of improving the reliability of a semiconductor device even if the downsizing thereof is advanced.The technical idea of the present invention lies in the configuration in which in a first to a third silicon nitride film to be formed by lamination, the respective film thicknesses thereof are not constant but become smaller in order from the third silicon nitride film in the upper layer to the first silicon nitride film in the lower layer while the total film thickness thereof is kept constant. Due to this it is possible to improve the embedding characteristic of the third silicon nitride film in the uppermost layer in particular, while ensuring the tensile stress of the first to third silicon nitride films, which makes effective the strained silicon technique.

REFERENCES:
patent: 7115954 (2006-10-01), Shimizu et al.
patent: 7488690 (2009-02-01), Iyer et al.
patent: 2008-506262 (2008-02-01), None
patent: WO-02/43151 (2002-05-01), None

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