Method of fabricating a semiconductor device

Details Method of fabricating a semiconductor device Method of fabricating a semiconductor device

2011-05-10

2011-05-10

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from gaseous state combined with subsequent...

C438S706000, C438S745000, C257SE21023, C257SE21228, C257SE21229, C257SE21236, C257SE21240, C257SE21246, C257SE21247, C257SE21252, C257SE21257, C257SE21258, C257SE21278, C257SE21293, C257SE21435, C257SE21646

Reexamination Certificate

active

07939436

ABSTRACT:
A method of fabricating a semiconductor device forms a micro-sized gate, and mitigates short channel effects. The method includes a pull-back process to form the gate on a substrate. The method also includes forming inner and outer spacers on the gate that are asymmetric to one another with respect to the gate, and using the spacers in forming junction regions in the substrate on opposite sides of the gate. In particular, the inner and outer spacers are formed on opposite sides of the gate so as to have different thicknesses at the bottom of the gate. The inner and outer junction regions are formed by doping the substrate before and after the spacers are formed. Thus, the inner and outer junction regions have extension regions under the inner and outer spacers, respectively, and the extension regions have different lengths.

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