Semiconductor device having a high aspect cylindrical...

Details Semiconductor device having a high aspect cylindrical... Semiconductor device having a high aspect cylindrical...

2011-07-26

2011-07-26

Pham, Hoai v (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S254000, C438S396000, C257SE21648

Reexamination Certificate

active

07985645

ABSTRACT:
A semiconductor device having a high aspect cylindrical capacitor and a method for fabricating the same is presented. The high aspect cylindrical type capacitor is a stable structure which is not prone to causing bunker defects and losses in a guard ring. The semiconductor device includes the cylindrical type capacitor structure, a storage node oxide, a guard ring hole, a conductive layer, and a capping oxide. The cylindrical type capacitor structure in a cell region includes a cylindrical type lower electrode, a dielectric and an upper electrode. The storage node oxide is in a peripheral region over the semiconductor substrate. The conductive layer coating the guard ring hole. The guard ring hole at a boundary of the peripheral region that adjoins the cell region over the semiconductor substrate. The capping oxide partially fills in a part of the conductive layer. The gapfill film filling in the rest of the conductive layer.

REFERENCES:
patent: 7572711 (2009-08-01), Park et al.
patent: 7871891 (2011-01-01), Cho et al.
patent: 1020050067483 (2005-07-01), None

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