Semiconductor device and method for manufacturing the device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C257SE21444

Reexamination Certificate

active

07919375

ABSTRACT:
A semiconductor device and a method for manufacturing the device capable of preventing an LDD region and a lower portion of the gate electrode from overlapping each other to achieve desirable device performance are disclosed. Embodiments relate to a semiconductor device and a method for manufacturing the device that may minimize overlap between an LDD region and a lower portion of the gate electrode. Minimizing overlap may maximize device performance and minimize the generation of defects between gate electrodes.

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patent: 6806534 (2004-10-01), Dokumaci et al.
patent: 6864540 (2005-03-01), Divakaruni et al.
patent: 7071043 (2006-07-01), Tang et al.
patent: 2004/0157421 (2004-08-01), Koh
patent: 2005/0133836 (2005-06-01), Seo
patent: 1 528 599 (2005-05-01), None
patent: 10-2001-0027096 (2001-04-01), None
patent: 10-2004-0070656 (2004-08-01), None

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