Methods of designing an integrated circuit on corrugated...

Details Methods of designing an integrated circuit on corrugated... Methods of designing an integrated circuit on corrugated...

2011-06-14

2011-06-14

Jackson, Jr., Jerome (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21442, C438S270000

Reexamination Certificate

active

07960232

ABSTRACT:
By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repeatably produced. Forming a corrugated substrate prior to actual device formation allows the ridges on the corrugated substrate to be created using high precision techniques that are not ordinarily suitable for device production. MOSFETs that subsequently incorporate the high-precision ridges into their channel regions will typically exhibit much more precise and less variable performance than similar MOSFETs formed using optical lithography-based techniques that cannot provide the same degree of patterning accuracy. Additional performance enhancement techniques such as pulse-shaped doping and “wrapped” gates can be used in conjunction with the segmented channel regions to further enhance device performance.

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