Method of forming a MOSFET using a disposable gate and raised so

Details Method of forming a MOSFET using a disposable gate and raised so Method of forming a MOSFET using a disposable gate and raised so

1997-10-24

2000-05-16

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438301, 438303, 438592, H01L 21336, H01L 214763

Patent

active

060636777

ABSTRACT:
A method for forming a MOSFET transistor (100) using a disposable gate (120). A disposable gate (120) having at least two materials (122,124) that may be etched selectively with respect to each other is formed on a semiconductor substrate (102). Source/drain regions (104) are then formed adjacent the disposable gate. The source/drain regions may, for example, include raised source/drain regions (106). An insulator layer (114) is then deposited over the structure and then a portion of the insulator layer (114) over the disposable gate (120) is removed (e.g., using CMP or an etch-back). The composition of the insulator layer (114) is chosen such that the top layer (124) of the disposable gate (120) may be removed selectively with respect to the insulator layer (114). The disposable gate (120) is then removed and a channel implant may be performed that is self-aligned and only in the channel region. The gate dielectric (110) and gate electrode (112) are then formed.

REFERENCES:
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patent: 5391510 (1995-02-01), Hsu et al.
patent: 5545579 (1996-08-01), Liang et al.
patent: 5576227 (1996-11-01), Hsu
patent: 5824586 (1998-10-01), Wollesen et al.
patent: 5900666 (1999-05-01), Gardner et al.
Han et al.; "Recent developments in N20/NO-based ultra thin oxynitride gate dielectrics for CMOS ULSI applications", Solid-State and Integrated Circuit Technology, 1995; pp. 80-84, Nov. 1995.

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