Method of forming a MOSFET using a disposable gate with a sidewa

Details Method of forming a MOSFET using a disposable gate with a sidewa Method of forming a MOSFET using a disposable gate with a sidewa

1997-10-24

2000-05-16

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438300, 438305, 438926, H01L 21336

Patent

active

060636750

ABSTRACT:
A method for forming a MOSFET (200) using a disposable gate. A disposable gate (220) having at least two materials that may be etched selectively with respect to each other is formed on a substrate (202). A sidewall dielectric (215) is formed on the sidewalls of the disposable gate (220). The composition of the disposable gate materials (222,223, and 224) and the sidewall dielectric (215) are chosen such that the disposable gate (220) may be removed selectively with respect to the sidewall dielectric (215). A dielectric layer (214) is then deposited over the structure and a portion of the dielectric layer (214) is removed to expose the disposable gate (220) (e.g., using CMP or an etch-back). The composition of the dielectric layer (214) is chosen such that (1) the dielectric layer (214) may be removed selectively with respect to the sidewall dielectric (215) and (2) a layer of the disposable gate (220) may be removed selectively with respect to the dielectric layer (214). The disposable gate (220) is then removed and the gate dielectric (210) and gate electrode (212) are formed.

REFERENCES:
patent: 4359816 (1982-11-01), Abbas et al.
patent: 5168072 (1992-12-01), Moslehi
patent: 5576227 (1996-11-01), Hsu
patent: 5716861 (1998-02-01), Moslehi
patent: 5866459 (1999-02-01), Naem et al.

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