Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-02-25
2000-05-16
Tsai, Jey
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438243, 438253, H01L 21336, H01L 218242
Patent
active
060636696
ABSTRACT:
A manufacturing method provides a semiconductor device having a trench gate type transistor and a planer type transistor gate electrodes are formed certainly and without increasing the number of photolithography steps. After formation of a gate insulating film, a polysilicon film, and a WSi film for a transistor in a peripheral circuit section, an oxide film is formed on the entire surface of the resultant structure. Subsequently, the oxide film in a trench formation region is selectively removed in a memory cell array section and the oxide film other than a gate electrode formation region is selectively removed in the peripheral circuit section. A silicon substrate is etched using the remaining oxide film as a mask to form a trench in the memory cell array section, and the polysilicon film and the WSi film are etched to form the gate electrode in the peripheral circuit section. Thereafter, a gate insulating film and a gate electrode for a cell transistor are formed in the trench of the memory cell array section.
REFERENCES:
patent: 5283201 (1994-02-01), Tsang et al.
NEC Corporation
Tsai Jey
LandOfFree
Manufacturing method of semiconductor memory device having a tre does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Manufacturing method of semiconductor memory device having a tre, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of semiconductor memory device having a tre will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-258358