Method for silicon surface control for shallow junction formatio

Details Method for silicon surface control for shallow junction formatio Method for silicon surface control for shallow junction formatio

1997-12-08

2000-05-16

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438301, H01L 21336

Patent

active

060636653

ABSTRACT:
A system and method for providing a small device formed on a semiconductor is disclosed. The method and system include controlling the surface by providing a very thin oxide layer and providing a shallow implant through the very thin oxide layer.

REFERENCES:
patent: 5008212 (1991-04-01), Chen
patent: 5021358 (1991-06-01), Flanner et al.
patent: 5420051 (1995-05-01), Bohr et al.
patent: 5552332 (1996-09-01), Tseng et al.
patent: 5674788 (1997-10-01), Wristers et al.

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