Methods for forming a control gate apparatus in non-volatile mem

Details Methods for forming a control gate apparatus in non-volatile mem Methods for forming a control gate apparatus in non-volatile mem

1997-12-18

2000-05-16

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438201, 438211, 438593, 257315, H01L 29788

Patent

active

060636629

ABSTRACT:
Methods are provided to increase the process control during the fabrication of the control gate configuration in a non-volatile memory semiconductor device. The methods effectively smooth out the top surface of the control gate layer, which allows for a subsequently formed silicide layer to be formed on the control gate layer without significant surface depressions. Significant surface depressions in either the control gate layer or the silicide layer can lead to cracking of the silicide layer during subsequent thermal processing of the semiconductor device. Thus the disclosed methods prevent cracking of the silicide layer on the control gate, which can affect the performance of the semiconductor device by increasing the resistance of the control gate arrangement.

REFERENCES:
patent: 5150178 (1992-09-01), Mori
patent: 5156990 (1992-10-01), Mitchell
patent: 5480837 (1996-01-01), Liaw et al.
patent: 5973353 (1999-10-01), Yang et al.

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