Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
1999-08-11
2001-09-18
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S303000, C438S305000
Reexamination Certificate
active
06291329
ABSTRACT:
TECHNICAL FIELD
The present invention relates to a method of manufacturing a semiconductor device having sub-micron features. The present invention has particular applicability in manufacturing semiconductor devices with a design rule of about 0.18 micron and under with accurately dimensioned conductive features.
BACKGROUND ART
The escalating requirements for high density and performance associated with ultra large scale integration require responsive changes in electrical interconnect patterns, which is considered one of the most demanding aspects of ultra-large scale integration technology. Demands for ultra-large scale integration semiconductor wiring require increasingly denser arrays with minimal spacing between conductive lines. Implementation becomes problematic in manufacturing semiconductor devices having a design rule of about 0.18 micron and under, e.g., about 0.15 micron and under.
Semiconductor devices typically comprise a substrate and elements, such as transistors and/or memory cells, thereon. Various interconnection layers are formed on the semiconductor substrate to electrically connect these elements to each other and to external circuits. The formation of gate electrodes and interconnection lines is partly accomplished utilizing conventional photolithographic techniques to form a photoresist mask comprising a pattern and transferring the pattern to an underlying layer or composite by etching the exposed underlying regions.
In accordance with conventional practices, an anti-reflective coating (ARC) is typically provided between the photoresist layer and an underlying silicon layer to avoid deleterious reflections from the underlying silicon layer during patterning of the photoresist layer. ARCs are chosen for their optical properties and compatibility with the underlying silicon layer and typically include a silicon oxynitride, silicon-rich silicon nitride or titanium nitride. Conventional deep-ultraviolet (deep-UV) photoresist processing typically involves exposure to deep-UV radiation having a wavelength of about 100 nm to about 300 nm.
As miniaturization proceeds apace with an attendant shrinkage in size of individual semiconductor devices and crowding more devices into any given unit area, problems arise with respect to maintaining the accuracy of the dimensions of various features, notably polycrystalline silicon gate electrodes. During conventional processing, the ARC is deposited on an amorphous silicon (subsequently crystallized during processing) or polycrystalline silicon layer and a photomask formed on the ARC. In forming a conductive feature, e.g., gate electrode, the integrity of the ARC is deteriorated by virtue of various processing steps. For example, during ion implantation, the uniformity of its etchability is alternated. Moreover the integrity of the ARC is deteriorated during stripping of resist with a solvent. As a result, during conventional stripping of the ARC, as with hot phosphoric acid or by dry etching employing CF
4
and O
2
chemistry, the underlying silicon layer is damaged, as by pitting.
Conventional methodology for forming a gate electrode is schematically illustrated in
FIGS. 1A and 1B
, wherein similar features are denoted by similar reference numerals. Adverting to
FIG. 1A
, amorphous or polycrystalline silicon gate electrode layer
12
is formed on gate dielectric layer
11
overlying substrate
10
, and ARC
13
is formed on gate electrode
12
. As a result of previous processing, including ion implantation and stripping of the photoresist mask, the integrity of ARC
13
has been damaged in that it does not exhibit a uniform removal rate and exhibits porosity. Consequently, as shown in
FIG. 1B
, upon stripping ARC
13
in a conventional manner, as by employing hot phosphoric acid or dry etching, the upper surface
14
of a gate electrode
12
is pitted thereby adversely impacting device performance.
There exists a need for methodology enabling patterning of a conductive feature, such as a silicon gate electrode, with improved accuracy and integrity. There exists a further need for such methodology enabling the formation of gate electrodes without surface pitting.
SUMMARY OF THE INVENTION
An advantage of the present invention is a method of manufacturing a semiconductive device having accurately dimensioned conductive features, such as gate electrodes.
Another advantage of the present invention is a method of manufacturing a semicondutive device having gate electrodes with high integrity and without surface pitting.
Additional advantages and features of the present invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from the practice of the invention. The advantages of the present invention may be realized and obtained as particularly pointed out in the appended claims.
According to the present invention, the foregoing and other advantages are achieved in part by a method of manufacturing a semiconductor device, the method comprising: forming a silicon layer; forming a protective oxide layer on the silicon layers; forming an ARC on the protective oxide layer; patterning the silicon layer to form a conductive feature; and removing the ARC.
Embodiments of the present invention include depositing a protective silicon oxide layer, at a thickness of about 50 Å to about 100 Å, on an upper surface of an amorphous or polycrystalline silicon layer by chemical vapor deposition (CVD), e.g., plasma enhanced chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD) or in a furnace containing silane (SiH
4
) and nitrous oxide (N
2
O). A silicon oxide or silicon-rich ARC is formed on the protective oxide layer and photolithographic processing is conducted in a conventional manner to pattern the underlying silicon layer, as in forming a gate electrode. Subsequently, ion implantation is conducted to form source/drain regions and the photoresist mask stripped. The ARC is then removed in a conventional manner, as by stripping with hot phosphoric acid or dry etching without damage to the underlying silicon layer by virtue of the protective oxide layer formed thereon.
Additional advantages of the present invention will become readily apparent to those skilled in this art from the following detailed description, wherein only the preferred embodiment of the present invention is shown and described, simply by way of illustration of the best mode contemplated for carrying out the present invention. As will be realized, the present invention is capable of other and different embodiments, and its several details are capable of modifications in various obvious respects, all without departing from the present invention. Accordingly, the drawing and description are to be regarded as illustrative in nature, and not as restrictive.
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patent: 5677231 (1997-10-01), Maniar et al.
patent: 5891784 (1999-04-01), Cheung et al.
patent: 6049093 (2000-04-01), Manning et al.
patent: 6083852 (2000-07-01), Cheung et al.
patent: 6090722 (2000-07-01), Armacost et al.
patent: 6097090 (2000-08-01), Tran et al.
Huang Richard J.
Shen Lewis
Advanced Micro Devices , Inc.
Luk Olivia
Niebling John F.
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