Photoresist cross-linking monomers, photoresist polymers and...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S325000, C430S326000, C430S914000, C526S256000, C526S268000, C526S281000, C549S057000, C549S463000, C560S118000, C560S120000

Reexamination Certificate

active

06200731

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates to cross-liking monomers for photoresist polymers, photoresist polymers and photoresist compositions comprising the same. More specifically, it relates to cross-linking monomers which can noticeably improve the polymerization yield of photoresist copolymers, and a process for preparing a photoresist copolymer using the same.
BACKGROUND OF THE INVENTION
Recently, photoresist copolymers wherein alicyclic monomers have been introduced into the main chain or branched chain have proven to be useful to obtain ultra-micro patterns. However, photoresist copolymers consisting of alicyclic monomers typically have a low polymerization yield, thereby synthesis of the copolymer requires high production cost.
In addition, as the amount of the monomer employed in the polymerization increases, the polymerization yield is noticeably lowered, so that the photoresist polymer can be hardly prepared on a large scale.
SUMMARY OF THE INVENTION
The object of the present invention is to solve the problems described above, and to provide cross-linking monomers which can reduce the production cost of photoresist polymers by maximizing their polymerization yield and thereby make mass production of such polymers possible.
Another object of the present invention is to provide photoresist polymers using said cross-linking monomers, and processes for the preparation thereof.
Still another object of the present invention is to provide a photoresist composition using the photoresist polymer described above, which is usable in a lithography process employing an extremely short wavelength light source.


REFERENCES:
patent: 3869502 (1975-03-01), Papa et al.
patent: 3966797 (1976-06-01), Colomb, Jr. et al.
patent: 4352939 (1982-10-01), Paucot
patent: 4707301 (1987-11-01), Lange

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Photoresist cross-linking monomers, photoresist polymers and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photoresist cross-linking monomers, photoresist polymers and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photoresist cross-linking monomers, photoresist polymers and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2521124

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.