Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
1999-07-09
2001-05-29
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S586000, C438S587000, C438S588000, C438S192000, C438S199000, C438S211000, C438S216000, C438S706000, C438S710000
Reexamination Certificate
active
06239006
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to native oxide removal that is done prior to a cobalt silicide formation on a semiconductor substrate. In particular, the present invention relates to native oxide removal by using a fluorinated plasma.
2. Description of the Related Art
Cobalt silicide formation is used for providing a good contact for source and drain regions within a silicon substrate. A cobalt silicide layer, which is a layer having good conductive properties, is formed above the source or drain regions, and an electrical contact is made to the source or drain regions by contacting the cobalt silicide layer. For complete cobalt (or nickel or ti m) silicide formation, the silicon surface must be free of oxide before the cobalt deposition. The cobalt silicide layer is formed on a polysilicon gate (or stack), in order to lower a resistance of the polysilicon (or ‘poly’), and it also is formed on exposed silicon regions of the substrate where source and drain regions are to be formed. The cobalt silicide layer forms a good contact to those source and drain regions, and also lower the resistance of a conductive path to those layers.
For a typical cobalt deposition process, the cobalt (or nickel or titanium) is deposited over the entire wafer. This provides cobalt on top of bare silicon areas that are source regions and drain regions. The cobalt is also provided over gate regions, or stacks, and over oxide materials, with those oxide materials being either sealed oxide or spacer materials which act as insulators.
Once the cobalt is deposited, the wafer is subjected to a rapid thermal anneal (RTA), where it is heated up. This reacts the cobalt with the exposed silicon, and cobalt silicide is formed as a result. in those areas of the wafer where cobalt is not in contact with silicon but rather is in contact with oxide (e.g., native oxide layer), either nothing happens or cobalt oxide is formed. Cobalt oxide is nonconducting.
Then, the wafer is subjected to a wet chemical process that strips off cobalt and cobalt oxide but does not strip off cobalt silicide. This results in the stripping off of excess cobalt in areas which are not in contact with the silicon, with those areas including areas where the cobalt was deposited on top of oxide. What is left is a cobalt silicide layer that exists over exposed silicon, where source and drain regions are to be (or have been) formed.
Then, the wafer is placed back into an RTA system, and taken to an even hotter temperature, so as to make the cobalt silicide have a proper grain structure to ensure good conductivity. Precise details of the environmental parameters and process times for each of these steps are known to those skilled in the art, and are not provided herein so as to more clearly describe the present invention, which deals with a process that is performed prior to the cobalt deposition step.
Prior to the cobalt deposition step, it is important that the areas in which cobalt silicide is to be formed, such as areas in which a source and a drain region are formed within a substrate, have exposed silicon on their top surfaces. Thus, a good clean step is required in order to provide for exposed silicon in particular areas of a substrate, since any oxide remaining in those areas will cause problems in the cobalt silicide formation process, as explained above.
A first conventional method for cleaning prior to cobalt deposition corresponds to a high-bias argon sputter etch, which is performed in-situ.
FIG. 1
shows a wafer after it has been subjected to a high-bias argon sputter etch. In
FIG. 1
, gate region
110
and gate region
120
have gate oxide layers
130
,
140
, respectively, which form an insulating layer with respect to the substrate
100
, where source and drain regions are formed within the substrate
100
. After the high-bias argon sputter etch, which is typically performed with a 250 volt bias, damage is caused in the gate oxide layers
130
,
140
as a result of using such a high bias voltage, even though the area
150
between the gate regions
110
,
120
in which source and drain regions are formed (not shown) has been cleaned of any oxide, thereby leaving an exposed silicon surface that is desirable for a cobalt deposition step to be performed subsequently.
A second conventional method for cleaning prior to cobalt deposition corresponds to a low-bias argon sputter etch, which is performed in-situ.
FIG. 2
shows a wafer after it has been subjected to a low-bias argon sputter etch. In
FIG. 2
, gate region
110
and gate region
120
have gate oxide layers
130
,
140
, respectively, which form an insulating layer with respect to a top surface of the substrate
100
, where source and drain regions are formed within the substrate
100
. After the low-bias argon sputter etch, which is typically performed with a 50 volt bias, the gate oxide layers
130
,
140
are not damaged as in the first conventional method, but due to the low-bias voltage, the area
150
has redeposited oxide
160
formed thereon. The redeposited oxide
160
is formed from the spacers
185
,
188
surrounding the gate regions
110
,
120
, whereby part of the spacers
185
,
188
is sputtered off and ends up on top of the area
150
. This is undesirable, since exposed silicon is not present on a portion of the substrate
100
where a source and a drain region are formed.
Thus, the first conventional method provides for a clean oxide-free substrate surface over source and drain areas so as to allow for proper cobalt silicide formation when cobalt is deposited onto the substrate, but at the expense of causing some damage to the gate oxide layers. The second conventional method does not damage the gate oxide layers, but also does not provide for a clean oxide-free substrate surface over the source and drain areas.
Therefore, a better process for preparing a substrate for a later-performed cobalt silicide formation process is desired.
SUMMARY OF THE INVENTION
An object of the invention is to provide for substantial native oxide removal before a cobalt deposition is performed on a semiconductor substrate.
Another object of the invention is to provide for substantial native oxide removal without adversely affecting other portions of a semiconductor substrate before a cobalt deposition is performed on the semiconductor substrate
At least some of the above-mentioned objects and other advantages may be achieved by an oxide removal method for a semiconductor substrate that includes a polysilicon stack with a gate oxide layer formed between a top surface of the substrate and the stack and with a native oxide layer formed on the substrate on portions of the top surface of the substrate where the polysilicon stack is not located. The method includes providing a fluorinated sputter etch at a bias voltage of between 50 volts and 100 volts in order to remove the native oxide layer without substantially affecting the gate oxide layer.
REFERENCES:
patent: 5130267 (1992-07-01), Kaya
patent: 5665203 (1997-09-01), Lee
patent: 5707486 (1998-01-01), Collins
patent: 5915204 (1999-06-01), Sumi
Advanced Micro Devices , Inc.
Foley & Lardner
Luu Chuong A
Smith Matthew
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