Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Reexamination Certificate
1995-10-27
2001-09-11
Graybill, David E. (Department: 2814)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
C438S763000, C438S780000, C438S782000, C438S785000
Reexamination Certificate
active
06287985
ABSTRACT:
BACKGROUND OF THE INVENTION
This invention relates to opaque coatings for electronic devices. In particular, the present invention is an opaque protective coating and method of applying the coating to integrated circuits and multichip modules. The coating inhibits inspection and reverse engineering of integrated circuits and multichip modules.
Opaque coatings and methods of applying opaque coatings to electronic devices to inhibit inspection and reverse engineering are generally known. U.S. Pat. No. 5,399,441 to Bearinger et al. discloses one such method of forming an opaque coating on an integrated circuit. In Bearinger et al., an opaque ceramic coating is formed on an integrated circuit by a wafer level process that includes selectively applying a coating composition comprising a silica precursor resin and a filler onto the surface of complete IC wafer. A wafer is defined here as a slice of semiconductor crystalline ingot used for substrate material when modified by the addition, as applicable, of impurity diffusion (doping), ion implantation, epitaxy, etc., and whose active surface has been processed into arrays of discreet devices or ICs by metallization and passivation. A liquid mixture that includes the silica precursor resin and the filler is selectively applied to the integrated circuit by (1) masking the circuit, applying the liquid mixture and removing the mask, (2) selectively “painting” the circuit or (3) silk screening the circuit.
The coated integrated circuit is then heated at a temperature sufficient to convert the coating composition (i.e., liquid mixture) to a silica containing ceramic matrix having the filler distributed therein. Preferably, the integrated circuit with coating composition thereon is heated in a Lindberg furnace at a temperature within the range of about 50° C. to 425° C. for generally up to six (6) hours, with less than about three (3) hours being preferred, to convert the coating composition to a silica containing ceramic matrix. In Bearinger et al. the preferred silica precursor resin is hydrogen silsesquioxane resin (H-resin). To achieve a coating opaque to radiation, a filler comprising insoluble salts of heavy metals is combined with the silica precursor resin. To achieve a coating impenetrable to visual light, an optically opaque filler is combined with the silica precursor resin.
Because the method of applying the opaque coating to an integrated circuit of Bearinger et al. requires an extensive heating time period to transform the coating composition to a silica containing ceramic matrix, Bearinger, et al.'s method is not particularly cost effective or efficient on a mass production level. Also, the Bearinger coating does not provide full protection since the liquid mixture is applied to the integrated circuit at the wafer level and before assembly of the actual devices into IC or MCM packages. Therefore, protection is not provided for packaging components such as wire bonds, bond pads, and inteconnects.
The U.S. Pat. No. 5,258,334 to Lantz, II discloses another process of applying an opaque ceramic coating to an integrated circuit. In Lantz, II, visual access to the topology of an integrated circuit is denied via an opaque ceramic produced by first mixing opaque particulate with a silica precursor. This mixture is then applied to the surface of the integrated circuit. The coated integrated circuit is then heated to a temperature in the range of 50° C. to 450° C. in an inert environment for a time within the range of one (1) second to six (6) hours to allow the coating to flow across the surface of the integrated circuit without ceramifying. The coated integrated circuit is then heated to a temperature in the range of 20° C. to 1000° C. in a reactive environment for a time in the range of two (2) to twelve (12) hours to allow the coating to ceramify. As with the above described Bearinger et al. patent, the method of applying the opaque coating of Lantz, II is limited with respect to security and is also time consuming and therefore not particularly cost effective nor efficient on a mass production level.
There is a need for improved protective coatings for integrated circuits and multichip modules. In particular, there is a need for an improved protective coating that is abrasion resistant, adherent, radiopaque and optically opaque to prevent inspection and/or reverse engineering of the topology of the integrated circuits and multichip modules. The protective coating should be capable of being applied to integrated circuits and multichip modules in a time efficient and cost effective process to permit coating application on a mass production level.
SUMMARY OF THE INVENTION
The present invention is an opaque coating and a method of forming an opaque coating on a semiconductor integrated circuit device. To form the opaque coating on the integrated circuit device a coating composition is prepared. The coating composition is then heated to a temperature sufficient to transform the coating composition to a molten state. Next, the molten coating composition is applied to a surface of the integrated circuit device to form an opaque coating that overlies active circuitry on the surface so as to prevent optical and radiation based inspection and reverse engineering of the active circuitry.
This protective opaque coating can be applied to semiconductor integrated circuit devices, such as integrated circuits and multichip modules, in a time efficient and cost effective process to permit coating application on a mass production level. The protective coating can be applied in whole or in part to assembled MCM and IC devices.
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Anderson Curtis W.
Heffner Kenneth H.
Graybill David E.
Greenstien Robert E.
Honeywell International , Inc.
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