Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-04-16
1998-10-20
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438130, 438981, H01L 218246
Patent
active
058245855
ABSTRACT:
A semiconductor read-only memory (ROM) device is provided. The particular semiconductor structure of this ROM device can reduce the parasitic capacitance between the bit lines and the word lines, such that the resistance-capacitance time constant of the memory cells can be reduced to thereby speed up the access time to the memory cells. The binary data stored in each memory cell is dependent on whether a contact window is predefined to be formed in a thick insulating layer between the buried bit lines and the overlaying word lines. If the gate electrode of one memory cell is electrically connected to the associated word line via one contact window through the insulating layer, that memory cell is set to a permanently-ON state representing a first binary value; otherwise, that memory cell is set to a permanently-OFF state representing a second binary value. The threshold voltage of the permanently-ON memory cells is about in the range from 0.4 V to 0.7 V.
REFERENCES:
patent: 5576573 (1996-11-01), Su et al.
patent: 5597753 (1997-01-01), Sheu et al.
patent: 5712203 (1998-01-01), Hsu
Chaudhari Chandra
United Microelectronics Corp
LandOfFree
Semiconductor read-only memory device and method of fabricating does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor read-only memory device and method of fabricating , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor read-only memory device and method of fabricating will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-243829