Method of forming complementary type conductive regions on a sub

Details Method of forming complementary type conductive regions on a sub Method of forming complementary type conductive regions on a sub

1996-02-23

1998-10-20

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438585, 438692, H01L 21336, H01L 2128

Patent

active

058245766

ABSTRACT:
A method of forming complementary type conductive regions on a substrate includes, a) providing a first etch stop layer over a substrate; b) etching a void through the first etch stop layer inwardly towards the substrate; c) providing a first conductive layer of a first conductive material over the first etch stop layer and into the void; d) removing the first conductive layer over the first etch stop layer to eliminate all first conductive material from atop the first etch stop layer, and leaving first conductive material in the void; e) removing the remaining first etch stop layer from the substrate thereby defining a remaining region of first conductive layer; f) providing a second conductive layer of a second conductive material over the substrate and remaining first conductive layer region; and g) removing the second conductive layer over the first conductive layer to eliminate all second conductive material from atop the first conductive layer, and leaving second conductive material atop the substrate which is adjacent the projecting first conductive material region.

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patent: 5244835 (1993-09-01), Hachiya
patent: 5480830 (1996-01-01), Liao et al.
patent: 5563093 (1996-10-01), Koda et al.
patent: 5573633 (1996-11-01), Gambino et al.
patent: 5604155 (1997-02-01), Wang
patent: 5654242 (1997-08-01), Komatsu

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