Method for thermally treating a semiconductor substrate

Details Method for thermally treating a semiconductor substrate Method for thermally treating a semiconductor substrate

1982-12-20

1985-10-15

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156617R, 156DIG80, 219121L, C30B 104

Patent

active

045472564

ABSTRACT:
Apparatus and method are provided for thermally treating a semiconductor substrate. According to the method, the substrate is isothermally heated to an elevated temperature near the thermal treatment temperature and then is further heated to a higher temperature at which the thermal treatment occurs. Following the thermal treatment the substrate is isothermally cooled to a sufficiently low temperature to avoid thermally induced defects.

REFERENCES:
patent: 3600237 (1971-08-01), Davis et al.
patent: 4196041 (1980-04-01), Baghdadi et al.
patent: 4348580 (1982-09-01), Drexel
patent: 4410392 (1983-10-01), Winter
patent: 4432809 (1984-02-01), Chye
Powell et al., Appl. Phys. Lett. 39, No. 2, 7/15/81.
Fulks et al., Appl. Phys. Lett. 39(8), 10/15/81.
Yep et al., Appl. Phys. Lett. 38(3), 2/1/81.
Material Research Society Symposia vol. 13, Laser-Solid Interactions and Transient Thermal Processing of Materials, ed. Narayan et al., pp. 369-374--Wilson et al., North-Holland, N.Y.
IBM Technical Disclosure Bulletin, v. 15, No. 6, 11/72, p. 1967.
Dietl et al., Crystals v. 5, p. 76, Springer-Verlag, N.Y., 1981.

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