Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-01-08
1999-08-31
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438303, 438298, 257288, H01L 21336
Patent
active
059465816
ABSTRACT:
In a semiconductor device fabrication process, an active region of the semiconductor device is formed by doping an active region after formation of a relatively thick oxide layer. According to the process, a gate electrode is formed on a substrate and a relatively thick oxide layer is formed over the gate electrode. Portions of the relatively thick oxide layer are removed to expose a region of the substrate adjacent the gate electrode. The exposed region is then doped with a dopant to form an active region. The active region may form an LDD region. The relatively thick oxide layer may comprise a contact formation layer.
REFERENCES:
patent: 4512073 (1985-04-01), Hsu
patent: 5371026 (1994-12-01), Hayden et al.
patent: 5407847 (1995-04-01), Hayden et al.
patent: 5780336 (1998-07-01), Son
patent: 5786257 (1996-10-01), Wen
S. Wolf, Silicon Processing for the VLSI Era, vol. 2: Processing Integration, pp. 354-363 and 437-439, copyright 1990.
Wolf Silicon Processing for the VSLI Era Lattice Press pp. 354-357, 1990.
Gardner Mark I.
Paiz Robert
Spikes, Jr. Thomas E.
Advanced Micro Devices
Blum David S
Chaudhari Chandra
LandOfFree
Method of manufacturing a semiconductor device by doping an acti does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a semiconductor device by doping an acti, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device by doping an acti will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2428694