Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Patent
1996-10-18
1999-05-11
Bowers, Charles
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
438556, 438560, 438787, H01L21/31
Patent
active
059021357
ABSTRACT:
A method of removing vacancies in the crystal lattice of silicon wafers is provided. In particular, silicon wafers obtained from drawn rods have significantly higher defect densities in the central region as compared to the outer peripheries of the wafers. Before the diffusion of doping materials, the wafers are oxidized at a temperature that is generally lower than the diffusion temperature. As a result, the vacancies in the crystal lattice are filled with silicon which prevents the accumulation of heavy metals into the vacancies during the doping process. The performance and lifespan of the carrier in the central region of the wafers is thereby significantly increased.
REFERENCES:
patent: 5162247 (1992-11-01), Hazani
patent: 5244843 (1993-09-01), Chau et al.
patent: 5407838 (1995-04-01), Ohnishi et al.
patent: 5525529 (1996-06-01), Guldi
patent: 5587325 (1996-12-01), Comeau
patent: 5599722 (1997-02-01), Sugisaka et al.
patent: 5792699 (1996-06-01), Tsui
Sigurd Wagner, et al., "Diffusion of Gallium Through Silicon Dioxide Films into Silicon", J. Electrochem. Soc.: Solid-State Science and Technology, vol. 121, No. 11, Nov. 1974, pp. 1487-1496.
P. H. Holloway et al., "Grain Boundary Diffusion of Phosphorous in Silicon", J. Vac. Sci. Technol. A, vol. 7, No. 3, May/Jun. 1989, pp. 1573-1578.
Z. Li, et al., "Gettering in High Resistive Float Zone Silicon Wafers for Silicon Detector Applications", IEEE Transactions on Nuclear Science, vol. 36, No. 1, Feb. 1989, pp. 290-294.
J-G. Park, et al., "Nature of D-Defect in CZ Silicon: D-Defect Dissolution and D-Defect Related T.D.D.B.", Materials Science Forum, vols. 196-201, (1995), pp. 1697-1706.
Berry Renee R.
Bowers Charles
Siemens Aktiengesellschaft
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