Method of forming a fine resist pattern of high resolution using

Details Method of forming a fine resist pattern of high resolution using Method of forming a fine resist pattern of high resolution using

1993-03-31

1996-08-20

Lesmes, George F.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430311, 430326, G03C 500

Patent

active

055478131

ABSTRACT:
The present invention provides a method of forming a fine resist pattern using a contrast enhancement layer improved so that the dimension accuracy of patterning is improved regardless of difference in resist film thickness according to position. A resist is formed on a substrate. A middle layer having the index of refraction adjusted to 1.3 to 1.4 is formed on the resist to prevent the contrast enhancement layer and the resist from being mixed. A contrast enhancement layer is formed on the middle layer. Light is selectively directed towards the resist from above the contrast enhancement layer. Then, the contrast enhancement layer and the middle layer are removed, followed by development of the resist.

REFERENCES:
patent: 4278327 (1981-07-01), McMahon et al.
patent: 4575399 (1986-03-01), Tanaka et al.
patent: 4663275 (1987-05-01), West et al.
patent: 5146086 (1992-09-01), De et al.
Aldrich Catalog, pp. F19, 797, 1028, Published 1992.
T. Tanaka et al., "A New Photolithography Technique With Antireflective Coating On Resist: ARCOR", J. Electrochem, Soc., vol. 137, No. 12, pp. 3900-3904, Dec. 1990.

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