Multilayer photoresist process utilizing cinnamic acid derivativ

Details Multilayer photoresist process utilizing cinnamic acid derivativ Multilayer photoresist process utilizing cinnamic acid derivativ

1984-06-11

1985-08-13

Kittle, John E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430286, 430330, 430374, 430396, 430502, 430503, 430512, G03F 702, G03C 176

Patent

active

045350531

ABSTRACT:
Spin castable polymethylmethacrylate photoresist compositions are provided utilizing certain cinnamic acid derivatives as dyes capable of absorbing light at about 436 nm and substantially transparent to light at about 220-250 nm. The spin castable polymethylmethacrylate resist compositions are used in making semiconductor devices by multilayer photoresist methods.

REFERENCES:
patent: 4362809 (1982-12-01), Chen et al.
patent: 4414314 (1983-11-01), Kaplan et al.
Bassous et al., "Acridine and Acridine Derivatives in Photoresist", IBM Tech. Dis. Bulletin, vol. 23(7B), Dec. 1980, p. 3387.
Chang et al., "An Ideal Projection Photolithography", 1981 Symposium on VLSI Technology, Digest of Technical Papers, Maui, HI., U.S.A., Sep. 1981.
Submicrometer Contact Hole Delineation with a Two-Layer Deep-UV Portable Conformable Masking System, Petrillo et al., J. Vac. Sci. Technol., B 1 (4), Oct.-Dec. 1983, pp. 1219-1224.
The Chemical Behavior of Positive Working Systems, Strieter, Eastman Kodak Co., Proc. of the Microelectronics Seminar Interface '76.
Practicing the Novolac Deep-UV Portable Conformable Masking Technique, Lin et al., J. Vac. Sci. Technol., 19(4), Nov./Dec. 1981, pp. 1313-1319.
Dec. 7, 1982, Official Gazette, p. 296.

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