Method of making a multi-level ROM device

Details Method of making a multi-level ROM device Method of making a multi-level ROM device

1997-07-14

1998-07-28

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438277, 438282, H01L 218246, H01L 218234

Patent

active

057862532

ABSTRACT:
A method of making multi-level ROM devices in which the gate width controls the threshold voltage setting of each memory unit, instead of the conventional method of setting the threshold voltage through the implantation of ions into the channel region of a memory unit. The memory units include memory units having their word line polysilicon layer completely removed, which are units in an OFF state. Memory units having part of the word line polysilicon layer removed are units with a higher threshold voltage, while memory units having the word line polysilicon layer left untouched are memory units with a lower threshold voltage.

REFERENCES:
patent: 4180826 (1979-12-01), Shappir
patent: 5394356 (1995-02-01), Yang

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