Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1995-10-12
1998-07-28
Chaudhuri, Olik
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438250, 438393, H01L 218242
Patent
active
057862486
ABSTRACT:
A semiconductor processing method of forming a capacitor on a substrate includes, a) providing an oxidizable and electrically conductive inner capacitor plate on the substrate; b) cleaning the inner capacitor plate to remove oxide therefrom; c) within a chemical vapor deposition reactor, chemical vapor depositing a dielectric nitride layer over the cleaned inner capacitor plate to a first thickness, the substrate not being exposed to oxidizing conditions between the cleaning and chemical vapor depositing steps; d) providing a densified Ta.sub.2 O.sub.5 dielectric layer over the dielectric nitride layer; and e) providing an outer capacitor plate over the Ta.sub.2 O.sub.5 layer. Additionally, a method of forming a capacitor on a substrate includes, i) providing an oxidizable and electrically conductive inner capacitor plate on a substrate; ii) providing a densified Ta.sub.2 O.sub.5 dielectric layer over the inner capacitor plate; iii) within a chemical vapor deposition reactor, chemical vapor depositing a dielectric nitride layer over the Ta.sub.2 O.sub.5 layer to a first thickness; and iv) providing an outer capacitor plate over the Ta.sub.2 O.sub.5 layer, the outer capacitor plate being provided outwardly of the dielectric nitride layer. The invention also includes capacitors produced according the method.
REFERENCES:
patent: 4464701 (1984-08-01), Roberts et al.
M. Yoshimura, et al., "High Quality Ultra Thin Si.sub.3 N.sub.4 Film Selectively Deposited On Poly-Si Electrode By LPCVD With In Situ HF Vapor Cleaning", IEDM 1992, pp. 271-274.
Kamiyama et al., "Highly Reliable 2.5nm Ta.sub.2 O.sub.5 Capacitor Process Technology for 256Mbit DRAMs", IEMD 1991, pp. 827-830.
Kamiyama, et al., "Ultrathin Tantalum Oxide Capacitor Dielectric Layers Fabricated Using Rapid Thermal Nitridation Prior to Low Pressure Chemical Vapor Deposition", J. Electrochem. Soc., vol. 140, No. 6, Jun. 1993, pp. 1617-1625.
Chaudhuri Olik
Gurley Lynne A.
Micro)n Technology, Inc.
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