Semiconductor memory

Details Semiconductor memory Semiconductor memory

1995-05-23

1998-03-24

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

365186, 36523003, G11C 1300

Patent

active

057320373

ABSTRACT:
A dynamic RAM integrated circuit of the one-element memory cell type is provided with a plurality of data lines, a sense amplifier, a plurality of word lines disposed in a manner to intersect with the data lines, and memory cells disposed at the points of intersection between the data lines and the word lines. The RAM includes a P-type semiconductor substrate and an N-type well region formed in the substrate. The memory cells are disposed within the well, and the sense amplifier, which is connected to the date lines, is constructed of a pair of N-channel MOSFETs formed in the semiconductor substrate and a pair of P-channel MOSFETs formed in the well region.

REFERENCES:
patent: 4399519 (1983-08-01), Masuda et al.
patent: 5448520 (1995-09-01), Shimohigashi et al.
E. Arai et al., "A 64-kbit Dynamic MOS RAM", IEEE Journal of Solid-State Circuits, vol. SC-13, No. 3, Jun. 1978, pp. 333-338.

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