Trench transistor with localized source/drain regions implanted

Details Trench transistor with localized source/drain regions implanted Trench transistor with localized source/drain regions implanted

1996-10-30

1999-07-13

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438282, 438151, 438589, 257262, H01L 2100, H01L 21265

Patent

active

059239808

ABSTRACT:
A method of forming an IGFET includes forming a trench in a substrate, forming spacers on opposing sidewalls of the trench, forming a gate insulator on a bottom surface of the trench between the spacers, forming a gate electrode on the gate insulator and the spacers, removing at least portions of the spacers to form voids in the trench after forming the gate electrode, implanting localized source and drain regions through the voids and through the bottom surface of the trench outside the gate electrode, and forming a source and drain in the substrate that include the localized source and drain regions adjacent to the bottom surface of the trench. The localized source and drain regions provide accurately positioned channel junctions beneath the trench. Furthermore, the dopant concentration of the localized source and drain regions is controlled by the amount of the spacers, if any, left intact when the localized source and drain regions are implanted after removing the portions of the spacers.

REFERENCES:
patent: 4745086 (1988-05-01), Parillo et al.
patent: 4830975 (1989-05-01), Bovaird et al.
patent: 5141891 (1992-08-01), Arima et al.
patent: 5166084 (1992-11-01), Pfiester
patent: 5175118 (1992-12-01), Yoneda
patent: 5231038 (1993-07-01), Yamaguchi et al.
patent: 5362662 (1994-11-01), Ando et al.
patent: 5399515 (1995-03-01), Davis et al.
patent: 5504031 (1996-04-01), Hsu et al.
patent: 5512506 (1996-04-01), Chang et al.
patent: 5538913 (1996-07-01), Hong
patent: 5545579 (1996-08-01), Liang et al.
patent: 5547884 (1996-08-01), Yamaguchi et al.
patent: 5554550 (1996-09-01), Yang
patent: 5567635 (1996-10-01), Acovic et al.
patent: 5571738 (1996-11-01), Krivokapic
patent: 5587331 (1996-12-01), Jun
patent: 5610091 (1997-03-01), Cho
patent: 5736435 (1998-04-01), Venkatesan et al.

Affiliated with

Also associated with

Rating

Trench transistor with localized source/drain regions implanted does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Trench transistor with localized source/drain regions implanted , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench transistor with localized source/drain regions implanted will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2287445