Method of making greek letter psi shaped capacitor for DRAM circ

Details Method of making greek letter psi shaped capacitor for DRAM circ Method of making greek letter psi shaped capacitor for DRAM circ

1997-10-24

1999-07-13

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438675, H01L 218242

Patent

active

059239735

ABSTRACT:
A method of forming a capacitor having a cross section shape similar to the Greek letter psi. The shape of the capacitor plate provides a high capacitance using a modest amount of chip area. A capacitor hole is etched in a thick layer of a first dielectric. A layer of polysilicon is formed on the dielectric layer covering the sidewalls and bottom of the capacitor hole. A second dielectric is then used to fill the hole. A contact hole in the second dielectric extends to the contact region of the wafer and is filled with a polysilicon plug. The polysilicon plug and the polysilicon covering the sidewalls and bottom of the capacitor hole form the first capacitor plate. A layer of hemispherical grain polysilicon can be used to further increase the surface area of the first capacitor plate.

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patent: 5389568 (1995-02-01), Yan
patent: 5492850 (1996-02-01), Ryou
patent: 5550076 (1996-08-01), Chen
patent: 5554557 (1996-09-01), Roh
patent: 5571742 (1996-11-01), Jeong
patent: 5817554 (1998-10-01), Tseng

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