Method for forming a photoresist pattern and apparatus applicabl

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

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430 5, 430 22, 430311, 430327, 430328, 430396, 430397, G03F 900

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049353349

ABSTRACT:
Disclosed is a method in which pattern elements with predetermined wall profiles and/or lateral shapes, differing from the shapes of the respective pattern elements in an irradiation mask which is used, are formed in a photoresist layer. The method comprises a modification of a conventional photolithographic process, where a substrate supporting the photoresist layer is shifted laterally relative to the mask or the mask image in a continuous mode and or in steps during exposure.
Also disclosed is an apparatus which includes means for shifting a substrate relative to a mask into the x- and or the y-direction or means between the mask and the substrate for shifting the path of the beam relative to the substrate, and means for controlling the shifting means.
The method--especially in connection with the apparatus--allows formation of reproducible photoresist patterns with a great variety of differently formed, wall profiles and/or lateral shapes. Using the method photoresist patterns can be flexibly adapted to many applications.

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Badami, D. A., et al., "Photoresist Slope Control by Adjusting the Bandwidth and Wavelength of the Exposure Light", IBM Tech. Discl. Bull., vol. 26, No. 4 (Sep. 1983), pp. 1935-1936.
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