Process monitoring and thickness measurement from the back side

Details Process monitoring and thickness measurement from the back side Process monitoring and thickness measurement from the back side

1996-07-03

1998-03-03

Font, Frank G.

Optics: measuring and testing

By configuration comparison

With photosensitive film or plate

G01B 1106

Patent

active

057241449

ABSTRACT:
The processing of a semiconductor body front side surface can be monitored in-situ, and thickness data for a body can be obtained ex-situ, by directing an infrared beam at the back side surface of the body. The light is reflected from front and back sides of a body portion to form primary and secondary reflections which are detected. An interference signal representative of interference fringes of the primary and secondary reflections is generated, and thickness data for the body or a body portion is calculated from the interference signal. In-situ monitoring of processes such as mechanical-chemical polishing, chemical vapor deposition, and plasma or reactive ion etching is achieved by providing a light passageway through a semiconductor body support such as a chuck or electrode, e.g., a cathode. In this manner, the process monitoring does not hinder, and is not hindered by, the processing steps and equipment.

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