Process for manufacturing a semiconductor device including a sil

Details Process for manufacturing a semiconductor device including a sil Process for manufacturing a semiconductor device including a sil

1996-06-11

1998-03-03

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, 438307, H01L 21336

Patent

active

057233772

ABSTRACT:
A process for manufacturing a semiconductor device which prevents a short-circuit between a source region, a drain region and a gate electrode of a transistor. The process includes forming a sacrificial BPSG film on at least one of a top surface and a sidewalls of the gate electrode of the transistor, and forming a silicide film and removing the BPSG film by etching through a thin, incomplete, and unwanted silicide film formed on the BPSG film. In the step of removing the BPSG film, the unwanted silicide film formed on the BPSG film is also removed.

REFERENCES:
patent: 4690730 (1987-09-01), Teng et al.
patent: 5089432 (1992-02-01), Yoo
patent: 5130266 (1992-07-01), Huang et al.
patent: 5179034 (1993-01-01), Mori et al.
patent: 5340761 (1994-08-01), Loh et al.
patent: 5352631 (1994-10-01), Sitaram et al.
patent: 5401666 (1995-03-01), Tsukamoto
patent: 5411907 (1995-05-01), Yoo et al.
patent: 5491099 (1996-02-01), Hsu
patent: 5496750 (1996-03-01), Moslehi
patent: 5605854 (1997-02-01), Yoo
patent: 5656519 (1997-08-01), Mogami
patent: 5661052 (1997-08-01), Inoue et al.
Roger A. Haken, "Application of the self-aligned titanium silicide", Journal Vacuum Scl. Technol. B, vol. 3, No. 6, Nov./Dec. 1985, pp. 1657-1663.
V.Q. Ho et al., "Formation of self-aligned TiSi.sub.2 for VLSI contacts and interconnects", Journal vacuum Scl. technol. A, vol. 5, No. 4, Jul./Aug. 1987, pp. 1396-1401.
Wolf et al, "Silicon Processing For The VLSI Era vol. 1: Process Technology", Lattice Press, pp. 187-191, 397-399, 516-519, 1986 month unknown.

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