Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-02-10
1999-04-13
Tsai, Jey
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438639, 438974, 438942, H01L 214763
Patent
active
058937480
ABSTRACT:
A method for producing a small feature in a semiconductor device includes depositing a mask material on an unpatterned layer in which an ultra-narrow opening is to be formed, and then masking and etching the mask material to form a narrow opening. A spacer material is then deposited on the mask material, with spacer material settling into and covering the narrow opening. Thereafter, a portion of the spacer material is removed by etching, leaving some spacer material in the opening but exposing an ultra-narrow region of the first layer at the bottom of the opening in the mask material. The ultra-narrow region left uncovered by the spacer material is smaller than the narrow region in the mask material. Once the ultra-narrow region is uncovered, material in the first layer is removed through the ultra-narrow region, by anisotropic etching, for example, to form an ultra-narrow opening in the first layer.
REFERENCES:
patent: 5399518 (1995-03-01), Sim et al.
patent: 5616959 (1997-04-01), Jeng
patent: 5677242 (1997-10-01), Aisou
Advanced Micro Devices , Inc.
Tsai Jey
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