Method of forming a short channel field effect transistor

Details Method of forming a short channel field effect transistor Method of forming a short channel field effect transistor

1997-01-27

1999-04-13

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438290, 438302, 438305, H01L 21336

Patent

active

058937404

ABSTRACT:
A method of forming a short channel field effect transistor is disclosed. The method includes the steps of providing a semiconductor substrate having a well region of a first conductivity type; forming a gate electrode on the well region; implanting first impurities into the well region and adjacent to the gate electrode, the first implant step being at a first dose and a second conductivity type; forming sidewall spacers on edges of the gate electrode; implanting second impurities into the well region and adjacent to the gate electrode, the second implant step being at a second dose and at the second conductivity type; and implanting third impurities into the well region and adjacent the gate electrode, the third implant step being at a third dose and at the first conductivity type.

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Wolf, Silicon Processing for the VLSI Era vol. 3 pp. 622-621; "Improving the Short Channel Performance of the Conventional NMOS LDD", No month 1995 .

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