Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-03-27
1999-04-13
Tsai, Jey
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438275, 438981, H01L 2362
Patent
active
058937331
ABSTRACT:
An electrostatic-discharge (ESD) protecting circuit of a semiconductor device prevents damage from an ESD applied to an internal circuit through an input or output pad. The thickness of respective gate insulating layers of respective active devices of the electrostatic-discharge protecting circuit and internal circuit, which are formed within a given radius in the range of about 350 .mu.m to about 1000 .mu.m from the electrostatic-discharge protecting circuit, is thicker than the thickness of gate insulating layers of active devices formed outside the radius.
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"EDS: A Pervasive Reliability Concern for IC Technologies," Duvvury et al., Proceedings of the IEEE, vol. 81, No. 5, May 1993, pp. 690-702.
"Impact of Snapback-Induced Hole Injection on Gate Oxide Realiability of N-MOSFET," Mistry et al., IEEE Electron Device Letters, vol. 11, No. 10, Oct. 1990, pp. 460-462.
LG Semicon Co. Ltd.
Tsai Jey
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