Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-03-17
2000-06-06
Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
361320, 361321, 361322, 365117, 365145, H01L 2912
Patent
active
06072207&
ABSTRACT:
A liquid precursor containing a metal is applied to a substrate, RTP baked, and annealed to form a layered superlattice material. Special polyoxyalkylated precursor solutions are designed to optimize polarizability of the corresponding metal oxide materials by adding dopants including stoichiometric excess amounts of bismuth and tantalum. The RTP baking process is especially beneficial in optimizing the polarizability of the resultant metal oxide.
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patent: 5426075 (1995-06-01), Perino et al.
patent: 5478610 (1995-12-01), Desu et al.
patent: 5519566 (1996-05-01), Perino et al.
Dohlev, "Solid-State Superlattices", Scientific American, Nov. 1983, pp. 144-151.
Ito Takeshi
McMillan Larry D.
Paz De Araujo Carlos A.
Scott Michael C.
Yoshimori Hiroyuki
Olympus Optical Co,. Ltd.
Symetrix Corporation
Wallace Valencia
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