Semiconductor memory device and method for fabricating the same

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

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438238, 438647, 438653, 438675, 438685, 438637, 438643, 257296, 257751, 257767, H01L 218234, H01L 218242, H01L 214763, H01L 2144, H01L 2348

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06071770&

ABSTRACT:
A semiconductor memory device suitable for forming a capacitor using a high dielectric film for a highly integrated semiconductor device includes a semiconductor substrate, an insulating film having a contact hole, the insulating film being over the semiconductor substrate, a conductive film on the semiconductor substrate through the contact hole, the conductive film having a top portion acting as a diffusion barrier, a first electrode over the conductive films, a dielectric film over the first electrode, and a second electrode over the dielectric film.

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