Method of forming semiconductor device comprising a drain region

Details Method of forming semiconductor device comprising a drain region Method of forming semiconductor device comprising a drain region

1997-11-26

2000-09-05

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438303, 438305, H01L 21336

Patent

active

061142107

ABSTRACT:
A CMOS semiconductor device is formed having an N-channel transistor comprising a drain region with a graded N-LDD junction. The graded N-LDD junction is obtained by plural ion implantations at different implantation dosages, energies and angles. The graded N-LDD junction reduces the electric field around the drain, thereby increasing the HCI lifetime without adversely impacting the short channel effect.

REFERENCES:
patent: 5217910 (1993-06-01), Shimizu et al.
patent: 5270227 (1993-12-01), Kameyama et al.
patent: 5308780 (1994-05-01), Chou et al.
patent: 5372957 (1994-12-01), Liang et al.
patent: 5416736 (1995-05-01), Kosa et al.
patent: 5631485 (1997-05-01), Wei et al.
patent: 5759901 (1998-06-01), Loh et al.
patent: 5793090 (1998-08-01), Gardner et al.
patent: 5827774 (1998-10-01), Kitajima
patent: 5830788 (1998-11-01), Hiroki et al.
patent: 5851886 (1998-12-01), Peng
patent: 5891774 (1999-04-01), Ueda et al.
D. Nayak et al., in "A Comprehensive Study of Performance and Reliability of P, As, and Hybrid As/P N-LDD Junctions for Deep-Submicron CMOS Logic Technology," IEEE Electron Device Letters , vol. 18, No. 6, 1997, pp. 281-283.

Affiliated with

Also associated with

Rating

Method of forming semiconductor device comprising a drain region does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming semiconductor device comprising a drain region, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming semiconductor device comprising a drain region will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2211628