Method for forming resist pattern

Details Method for forming resist pattern Method for forming resist pattern

1997-02-27

1998-06-09

Baxter, Janet C.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

4302751, 430326, 430327, G03C 500

Patent

active

057631425

ABSTRACT:
Disclosed is a method for forming a resist pattern in which a chemically amplified resist which has a photosensitive acid-generating agent with a catalytic function is used, has the step of: treating the surface of nitrided metal film or nitrided semimetal film deposited on a substrate by using a substance that reduces the basicity of a basic substance which exists on the surface of nitrided metal film or nitrided semimetal film or which is chemically coupled with the nitrided metal film or nitrided semimetal film.

REFERENCES:
patent: 5552256 (1996-09-01), Aviram et al.
Hiroshi Ito, et al. "Application of Photoinitiators to the Design of Resists for Semiconductor Manufcturing", American Chemical Society Symposium Series, vol. 242, 1984, pp. 11-23.
T. Tokuyama, "Semicondutor Dry Etching Techniques", published by Sangyo Tosho, 1992, pp. 181-186.
English translation of JP 64-51622, Feb. 1989.
Y. Kawai et al.; "Environmental Stability of KrF Positive Chemically Amplified Resist with an Organic Base"; 47th Semiconductor Intergrated Circuit Symposium, (1994), pp. 18-23.

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