Method of depositing thin nitride layer on gate oxide dielectric

Details Method of depositing thin nitride layer on gate oxide dielectric Method of depositing thin nitride layer on gate oxide dielectric

1995-04-28

1997-09-16

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438308, H01L 21265

Patent

active

056680287

ABSTRACT:
A gate structure in a transistor and method for fabricating the structure. A gate structure is formed on a substrate. The gate structure includes three layers: an oxide layer, a nitride layer and a polysilicon layer. The oxide layer is located on the substrate, the nitride layer is located on the oxide layer, and the polysilicon layer is located on the nitride layer. The gate structure is reoxidized to form a layer of oxide over the gate structure.

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