Plasma processor and method for IC fabrication

Details Plasma processor and method for IC fabrication Plasma processor and method for IC fabrication

1984-09-27

1988-04-19

Czaja, Donald E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 156646, 20419232, 204298, 406 88, H01L 21306

Patent

active

047387483

ABSTRACT:
A plasma processor, for dry etching during a fabricating process for an integrated circuit semiconductor device, including a plasma generating region formed in a waveguide into which microwave power is transmitted. An etchant gas is introduced into the plasma generating region and a plasma is generated. The plasma generating region and a reacting region are kept at a specific gas pressure differential by an evacuating device. The radicals (active etching species) react with the underside of a turned wafer placed on a base plate in the reacting region because the gas is blown against the underside of the wafer by the pressure differential. In particular, the wafer is etched by etchant gases floating the wafer by blowing the gases out of holes in the base plate. The floating wafer processing method provides a higher processing rate and better etching uniformity.

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Antoci et al., "Spray Etch Apparatus", IBM Technical Disclosure Bulletin, vol. 14, No. 9, Feb. 1979, pp. 2605-2606.
Garnache et al., "Deposit and Clean Deposition System", IBM Technical Disclosure Bulletin, vol. 13, No. 7, Dec. 1970, p. 2083.

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