Positive resist and method for manufacturing a pattern thereof

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging

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430326, 430330, 430327, 430967, 430966, 430908, G03C 500

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active

044304196

ABSTRACT:
The invention provides a positive resist comprising a copolymer of 60 to 90 mol % of phenylmethacrylate and 40 to 10 mol % of methacrylic acid.
The invention also provides a method for forming a pattern of a positive resist comprising the steps of:

REFERENCES:
patent: 3535137 (1970-10-01), Haller et al.
patent: 3984582 (1976-10-01), Feder et al.
Yun et al.--The Copolymerization of Phenyl Methacrylate With Methacrylic Acid, Vysokomol. soyed. A12--No. 11, 2820-2825, 1970.
E. Gipstein et al., Parameters Affecting the Electron Beam Sensitivity of Poly(methyl methacrylate), IBM J. Res. Develop., Mar. 1977-pp. 143, 150 and 151.

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