Semiconductor electronic device with autoaligned polysilicon and

Details Semiconductor electronic device with autoaligned polysilicon and Semiconductor electronic device with autoaligned polysilicon and

1998-09-21

2000-12-12

Zarabian, Amir

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438270, 438273, 438527, 438529, H01L 21336, H01L 21423

Patent

active

061598054

ABSTRACT:
An electronic semiconductor device (20) with a control electrode (19) consisting of self-aligned polycrystalline silicon (4) and silicide (12), of the type in which said control electrode (19) is formed above a portion (1) of semiconductor material which accommodates active areas (9) of the device (20) laterally with respect to the electrode, has the active areas (9) at least partially protected by an oxide layer (10) while the silicide layer (12) is obtained by means of direct reaction between a cobalt film deposited on the polycrystalline silicon (4) and on the oxide layer (10). (FIG. 9)

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