Fabrication method of capacitor

Details Fabrication method of capacitor Fabrication method of capacitor

1999-08-04

2000-12-12

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438239, 438240, 438244, 438397, 438396, H01L 218242

Patent

active

061597910

ABSTRACT:
A fabrication method of a capacitor includes the steps of forming conductive regions in a semiconductor substrate, forming an insulation layer on the semiconductor substrate, forming contact holes over the conductive regions by etching the insulation layer, forming conductive plugs in the contact holes, forming a trench between adjacent conductive plugs by etching the insulation layer to a predetermined depth, forming a conductive layer on the entire structure obtained after the trench formation step, forming a lower electrode by etching the conductive layer using an anisotropic etching method, and forming a dielectric layer and an upper electrode on a surface of the lower electrode. The method decreases production costs of a capacitor and facilitates the processing steps.

REFERENCES:
patent: 5506166 (1996-04-01), Sandhu et al.
patent: 5714401 (1998-02-01), Kim et al.
patent: 5736449 (1998-04-01), Miki et al.

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