Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-04-22
1999-11-02
Whitehead, Jr., Carl
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438617, 438123, H01L 2144
Patent
active
059769645
ABSTRACT:
A method of forming a semiconductor device assembly comprising forming a wire bump on at least one bond pad on the active surface of a semiconductor device and connecting one end of a wire to the wire bump using a wire bond. The wire bump may be flattened before connecting one end of a wire thereto.
REFERENCES:
patent: 4176443 (1979-12-01), Iannuzzi et al.
patent: 4486945 (1984-12-01), Aigoo
patent: 4733289 (1988-03-01), Tsurumaru
patent: 4750666 (1988-06-01), Neugebauer et al.
patent: 4821148 (1989-04-01), Kobayashi et al.
patent: 5058798 (1991-10-01), Yamazaki et al.
patent: 5101263 (1992-03-01), Kitano et al.
patent: 5132772 (1992-07-01), Fetty
patent: 5235212 (1993-08-01), Shimizu et al.
patent: 5298793 (1994-03-01), Kotani et al.
patent: 5328079 (1994-07-01), Mathew et al.
patent: 5343064 (1994-08-01), Spangler et al.
patent: 5371654 (1994-12-01), Beaman et al.
patent: 5455195 (1995-10-01), Ramsey et al.
patent: 5492863 (1996-02-01), Higgins, III
patent: 5550083 (1996-08-01), Koide et al.
patent: 5559054 (1996-09-01), Adamjee
patent: 5656830 (1997-08-01), Zechman
patent: 5740956 (1998-04-01), Seo et al.
patent: 5764486 (1998-06-01), Pendse
Duong Khanh
Jr. Carl Whitehead
Micro)n Technology, Inc.
LandOfFree
Method of improving interconnect of semiconductor device by util does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of improving interconnect of semiconductor device by util, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of improving interconnect of semiconductor device by util will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2134768